ds30168 rev. 5 - 2 1 of 4 MMSTA05/mmsta06 www.diodes.com MMSTA05/mmsta06 npn small signal surface mount transistor epitaxial planar die construction complementary pnp type available (mmsta55/mmsta56) ideal for medium power amplification and switching ultra-small surface mount package also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g b e c mechanical data case: sot-323, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram MMSTA05 marking k1h, k1g (see page 2) mmsta06 marking k1g (see page 2) order & date code information: see page 2 weight: 0.006 grams (approx.) characteristic symbol MMSTA05 mmsta06 unit collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 4.0 v collector current - continuous (note 1) i c 500 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. e b c
ds30168 rev. 5 - 2 2 of 4 MMSTA05/mmsta06 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage MMSTA05 mmsta06 v (br)cbo 60 80 v i c = 100 a, i e = 0 collector-emitter breakdown voltage MMSTA05 mmsta06 v (br)ceo 60 80 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 4.0 v i e = 100 a, i c = 0 collector cutoff current MMSTA05 mmsta06 i cbo 100 na v cb = 60v, i e = 0 v cb = 80v, i e = 0 collector cutoff current MMSTA05 mmsta06 i ces 100 na v ce = 60v, i bo = 0v v ce = 80v, i bo = 0v on characteristics (note 2) dc current gain h fe 100 i c = 10ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) 0.25 v i c = 100ma, i b = 10ma base-emitter saturation voltage v be(sat) 1.2 v i c = 100ma, v ce = 1.0v small signal characteristics current gain-bandwidth product f t 100 mhz v ce = 2.0v, i c = 10ma, f = 100mhz ordering information (note 3) device packaging shipping MMSTA05-7 sot-323 3000/tape & reel mmsta06-7 sot-323 3000/tape & reel notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: mmsta06-7-f. marking information k1x ym k1x = product type marking code, ex: k1h = MMSTA05 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30168 rev. 5 - 2 3 of 4 MMSTA05/mmsta06 www.diodes.com 1 10 100 1000 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 4 collector emitter saturation voltage vs. collector current t=25c a t = -50c a t = 150c a 0.050 0 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 i c i b =10 0.001 0.01 i base current (ma) b, fi g .3t y pical collector saturation re g ion 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 0.1 1 10 100 v , collector emitter voltage (v) ce i=1ma c i = 10ma c i=30ma c i = 100ma c i , collector-base current (na) cbo t , ambient temperature (oc) a fig. 2 typical collector-cutoff current vs. ambient tem p erature 10 0.01 0.1 1 25 50 75 100 125 v=80v cb 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0
ds30168 rev. 5 - 2 4 of 4 MMSTA05/mmsta06 www.diodes.com 1 10 1000 100 1 10 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 7, gain bandwidth product vs collector current v=5v ce 0.1 0.2 0.1 1 10 100 v , base emitter voltage (v) be(on) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 v= 5v ce i , collector current (ma) c fig. 6, base emitter voltage vs collector current t = -50c a t = 25c a t = 150c a 1 10 1000 10000 100 1 10 1000 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 5, dc current gain vs collector current t = -50c a t = 25c a t = 150c a v=5v ce
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